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| SMBT3906...MMBT3906 PNP Silicon Switching Transistors * High DC current gain: 0.1 mA to 100 mA * Low collector-emitter saturation voltage * For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package * Complementary types: SMBT3904...MMBT3904 (NPN) * SMBT3904S / U: for orientation in reel see package information below * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 SMBT3906S/U C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type SMBT3906/ MMBT3906 SMBT3906S SMBT3906U 1Pb-containing Marking s2A s2A s2A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 package may be available upon special request 1 2008-02-29 SMBT3906...MMBT3906 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS 71 C TS tbd C TS 115 C TS 105 C Symbol VCEO VCBO VEBO IC Ptot Value 40 40 6 200 330 250 250 330 Unit V mA mW Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBT3906/ MMBT3906 SMBT3906S SMBT3906U 1For Tj T stg 150 -65 ... 150 Value 240 140 135 C Symbol RthJS Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE 40 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, V CE = 1 V 60 80 100 60 30 VCEsat - 300 V 0.25 0.4 0.85 0.95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Pulse 0.65 - test: t < 300s; D < 2% 3 2008-02-29 SMBT3906...MMBT3906 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 1 k F 4 dB tf 75 tstg 225 tr 35 td 35 ns Ceb 10 Ccb 3.5 pF fT 250 MHz Symbol min. Values typ. max. Unit 4 2008-02-29 SMBT3906...MMBT3906 Test circuit Delay and rise time -3.0 V 275 <1.0 ns +0.5 V 10 k 0 -10.6 V D = 2% C <4.0 pF 300 ns EHN00059 Storage and fall time -3.0 V <1.0 ns +9.1 V 0 -10.9 V 10 < t 1< 500 s D = 2% 10 k 275 C 1N916 <4.0 pF t1 EHN00060 5 2008-02-29 SMBT3906...MMBT3906 DC current gain hFE = (IC) VCE = 1 V EHP00774 Saturation voltage IC = (VBEsat; V CEsat) h FE = 10 EHP00767 10 1 2 mA h FE 5 C 10 2 5 125 C V CE V BE 10 0 25 C 10 1 5 -55 C 5 10 -1 -1 10 10 0 5 10 0 5 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 1.0 V 1.2 C V BE sat , V CE sat Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 8 pF Total power dissipation Ptot = (TS) SMBT3906/ MMBT3906 360 mW 300 270 7 VCB /VEB 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 4 8 12 16 V CCB CEB Ptot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 22 CCB/C EB C 150 TS 6 2008-02-29 SMBT3906...MMBT3906 Total power dissipation Ptot = (TS) SMBT3906S 300 mW Total power dissipation Ptot = (TS) SMBT3906U 360 mW 250 225 300 270 P tot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 C 150 P tot 200 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 C 150 TS TS Permissible Pulse Load Ptotmax/P totDC = (tp) 10 3 Ptot max 5 Ptot DC tp D= T tp T EHP00936 Permissible Puls Load R thJS = (tp) SMBT3906S 10 3 K/W 10 2 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2008-02-29 SMBT3906...MMBT3906 Permissible Pulse Load Ptotmax/P totDC = (tp) SMBT3906S 10 3 10 3 Permissible Puls Load R thJS = (tp) SMBT3906U P totmax/P totDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 2 10 1 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 -5 -4 -3 -2 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 10 10 10 s 10 0 tp tp Permissible Pulse Load Ptotmax/P totDC = (tp) SMBT3906U 10 2 Delay time t d = (I C) Rise time tr = (IC) EHP00772 10 3 ns Ptotmax /PtotDC 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t r ,t d 10 2 tr td h FE = 10 VCC = 3 V 15 V 40 V 10 1 V BE = 2 V 0V 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 C 8 2008-02-29 SMBT3906...MMBT3906 Storage time t stg = (IC) Fall time t f = (IC) 10 3 ns ts 25 C 125 C 10 2 EHP00762 10 3 ns 25 C 125 C EHP00773 h FE = 20 10 tf VCC = 40 V 10 2 h FE = 20 10 h FE = 20 10 1 10 1 h FE = 10 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 mA 5 10 3 C C Rise time tr = (I C) 10 3 ns tr 25 C 10 2 EHP00764 125 C VCC = 40 V h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 C 9 2008-02-29 Package SC74 SMBT3906...MMBT3906 Package Outline 2.9 0.2 (2.25) B (0.35) 2.5 0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 0.1 1.6 0.1 10 MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10 MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 10 2008-02-29 Package SOT23 SMBT3906...MMBT3906 Package Outline 0.15 MIN. 1 0.1 0.1 MAX. 1.3 0.1 2.9 0.1 3 B 2.4 0.15 10 MAX. 0.4 +0.1 -0.05 1) 1 2 10 MAX. C 0.95 1.9 0.08...0.1 A 5 0...8 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 11 2008-02-29 Package SOT363 SMBT3906...MMBT3906 Package Outline 2 0.2 0.2 -0.05 +0.1 0.9 0.1 6x 0.1 4 1.25 0.1 2.1 0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 12 2008-02-29 SMBT3906...MMBT3906 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 2008-02-29 |
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